Sputtering system [project 241]
UHV magnetron sputtering system dedicated to accurate and reproducible thin film layer deposition. It is configured to allow sputtering from both magnetic and non-magnetic target materials alike.
The UHV system comprises a process chamber with ancillary equipment together with a load lock chamber. The process chamber base pressure is guaranteed better than <2*10-9 mbar. The overall design allows several source configurations, including tilt, and deposition over a large range of temperatures, up to 1000˚C. A unique feature of the system is that the source mounting stage on the bottom face of the chamber is designed so that it can be effortlessly exchanged. Software (PLC based) allows for complete freedom in creating programs. The user can define a sequence of steps carried out on any device registered in the system. In addition, sequences can be stacked in the program, where it is possible to call cyclical individual sequences and whole groups. The process editor allows many different types of operation on the sequences: copy, move (changing the order of calls), remove, steps edit etc..
- The Deposition chamber is equipped with numerous ports for diagnostics and ancillary equipment. The five DN 100CF ports located on the bottom of the chamber are occupied by the magnetron sources which are suitable for DC sputtering, RF/pulsed DC sputtering or reactive DC sputtering for the deposition of both metallic and compound layers.
- The load lock chamber includes an internal bakeout system.